由其分销商提供的 onsemi MMBT3904WT1G 的描述。
TRANSISTOR, BIPOLAR, SI, NPN, GENERAL PURPOSE, VCEO 40VDC, IC 200MA, PD 150MW, HFE 30
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 200 mA, 150 mW, SOT-323, Surface Mount
40V 150mW 100@10mA,1V 200mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS
NPN SILICON GENERAL PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
MMBT Series 40 V 200 mA SMT NPN Silicon General Purpose Transistor - SOT-323
NPN BJT Transistor, 40V VCEO, 200mA IC, 300MHz, SC-70
Transistor GP BJT NPN 40V 0.2A 3-Pin SOT-323 T/R
Avnet Japan
Bipolar Transistors - BJT 200mA 60V NPN
onsemi NPNTransistor, SOT-323 (SC-70)encapsulation, SMD mount, Maximum DC collector current200 mA, maximum collector-emission voltage40 V
NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.
TRANSISTOR, NPN, SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 150mW; DC Collector Current: 200mA; DC Current Gain hFE: 300hFE; Transistor Ca