价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MMBF4393LT1G | 12,000 | 3K | 1d | ||||||||
| Future Electronics | MMBF4393LT1G | 48,000 | 3K | Tape & Reel | ||||||||
| Newark | MMBF4393LT1G | 6,201 | 5 | Cut Tape | ||||||||
| Arrow Electronics | MMBF4393LT1G | 7 | 1 | |||||||||
| Verical | MMBF4393LT1G | 96,000 | 3K |
备用零件
Price @ 1000
$ 0.133
$ 0.079
$ 0.079
Stock
7,389,504
507,511
507,511
Authorized Distributors
6
6
6
Mount
-
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
-
-
-
Drain to Source Resistance
100 Ω
100 Ω
100 Ω
Power Dissipation
225 mW
225 mW
225 mW
Gate to Source Voltage (Vgs)
30 V
30 V
30 V
Input Capacitance
14 pF
14 pF
14 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
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PMBFJ309 Series 25 Vds 50 mA N-Ch silicon field-effect Transistors - SOT-23
描述
由其分销商提供的 onsemi MMBF4393LT1G 的描述。
MMBF4393LT1G Series N Channel 30 V 50 mA JFET Switching Transistor - SOT-23
JFET Transistors; MMBF4393LT1G; ON SEMICONDUCTOR; 3; SOT-23-3; 1.016 mm; 30 V
TRANSISTOR; JFET; N-CHANNEL; SOT-23; 100 OHMS (MAX.); 30; 30; -55; +150
JFET N-CH 30V 0.225W SOT23 / Trans JFET N-CH 30V 3-Pin SOT-23 T/R
onsemi JFET, N, , SOT-23, Vds=30 V, 3, Idss: 5 to 30mA
JFET, 30V, 0.3A, 0.225W, SOT-23-3; Transistor Type: JFET; Breakdown Voltage Vbr: 30V; Zero Gate Voltage Drain Current Idss Min: 5mA; Zero Gate Voltage Drain Current Idss Max: 30mA; Gate-Source Cutoff Voltage Vgs(off) Max: -3V
N Channel Jfet, -30V, Sot-23; Gate Source Breakdown Voltage Max:30V; Zero Gate Voltage Drain Current Max:30Ma; Gate Source Cutoff Voltage Max:-3V; No. Of Pins:3 Pin; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes |Onsemi MMBF4393LT1G.
Channel Type = N-Channel / Configuration = Single / Drain-Source Voltage (Vds) V = 30 / Breakdown Voltage V = 30 / Power Dissipation (Pd) mW = 225 / Gate-Source Cutoff Voltage Max. (Vgs(off)) V = -3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Breakdown Voltage-30 V
Current Rating50 mA
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance100 Ω
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance14 pF
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation225 mW
Resistance100 Ω
Schedule B8541210080
Voltage Rating (DC)30 V
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
合规
环境分类
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
合规声明