供应链
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi MJF18008G 的描述。
Bipolar (BJT) Transistor NPN 450V 8A 13MHz 45W Through Hole TO-220FP
ON SEMI MJF18008G NPN HIGH VOLTAGE BIPOLAR TRANSISTOR, 8 A, 450 V, 3-PIN TO-220
8.0 A, 450 V NPN Bipolar Power Transistor
NPN Bipolar Power Transistor For Switching Power Supply Applications
Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
700mV@ 900mA,4.5V NPN 125W 9V 100μA 1KV 450V 8A TO-220FP Through hole mounting 9.24mm(height)
Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220FP Tube
450V 45W 8A 8@4.5A1V 13MHz NPN 300mV@2A200mA -65¡Í~+150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Transistor, Npn, 450V, 8A, To-220; |Onsemi MJF18008G
TRANSISTOR, NPN, 450V, 8A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 450V; Transition Frequency ft: 13MHz; Power Dissipation Pd: 45W; DC Collector Current: 8A; DC Current Gain hFE: 5hFE; Transistor
NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following:
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)1 kV
Collector Emitter Breakdown Voltage450 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)450 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
Frequency13 MHz
Gain Bandwidth Product13 MHz
hFE Min6
Max Collector Current8 A
Max Frequency1 MHz
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Transition Frequency13 MHz
Voltage Rating (DC)450 V
Dimensions
Height16.12 mm
Length10.63 mm
Width4.9 mm