由其分销商提供的 onsemi MJE13007G 的描述。
Bipolar junction transistor, NPN, 8 A, 400 V, THT, TO-220, MJE13007G
MJE13007 Series NPN 80 W 400 V 8 A Through Hole Switching Transistor - TO-220-3
ON SEMI NPN HIGH VOLTAGE BIPOLAR TRANSISTOR 8 A 400V 4-PIN TO-220AB
Bipolar Transistors (BJT); MJE13007G; ON SEMICONDUCTOR; NPN; 3; 400 V; 8 A
8.0 A, 400 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube
Bipolar Transistors - BJT 8A 400V 80W NPN
Power Transistor, TO-220, NPN, 400V
Bipolar Transistor, Npn, 400V, To-220; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:400V; Dc Collector Current:8A; Power Dissipation Pd:80W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Dc Current Gain Hfe:4Hferohs Compliant: Yes |Onsemi MJE13007G.
onsemi NPNTransistor, TO-220ABencapsulation, Through hole mounting, Maximum DC collector current8 A, maximum collector-emission voltage400 V
The MJE/MJF13007 is designed for high-voltage high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators Inverters Motor Controls Solenoid/Relay drivers and Deflection circuits.