由其分销商提供的 onsemi MJE13007G 的描述。
Bipolar junction transistor, NPN, 8 A, 400 V, THT, TO-220, MJE13007G
MJE13007 Series NPN 80 W 400 V 8 A Through Hole Switching Transistor - TO-220-3
ON SEMI NPN HIGH VOLTAGE BIPOLAR TRANSISTOR 8 A 400V 4-PIN TO-220AB
Bipolar Transistors (BJT); MJE13007G; ON SEMICONDUCTOR; NPN; 3; 400 V; 8 A
8.0 A, 400 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube
Bipolar Transistors - BJT 8A 400V 80W NPN
Power Transistor, TO-220, NPN, 400V
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 14MHz; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 4hFE; Transistor Case Style
The MJE/MJF13007 is designed for high-voltage high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators Inverters Motor Controls Solenoid/Relay drivers and Deflection circuits.