备用零件
此零件
备用零件
Price @ 1000
$ 0.192
$ 0.323
Stock
170,024
2,826,520
Authorized Distributors
2
6
Mount
Through Hole
-
Case/Package
TO-126
TO-225
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
3 A
3 A
Transition Frequency
50 MHz
50 MHz
Collector Emitter Saturation Voltage
-1.7 V
1.7 V
hFE Min
12
12
Power Dissipation
1.5 W
12.5 W
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2019-04-18
LTD Date2019-10-18
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi MJE172STU 的描述。
Tube Through Hole PNP Single Bipolar (BJT) Transistor 50 @ 100mA 1V 100nA ICBO 12.5W 50MHz
3.0 A, 80 V PNP Bipolar Power Transistor
MJE Series PNP 12.5 W 80 V 3 A Epitaxial Silicon Transistor - TO-126-3
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
80V 1.5W 3A 50@100mA1V 50MHz 1.7V@3A600mA PNP +150¡Í@(Tj) TO-126 Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOLAR, PNP, -80V, TO126-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 12.5W; DC Collector Current: -3A; DC Current Gain hFE: 12hFE; T
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-126
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight761 mg
Technical
Collector Base Voltage (VCBO)-100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage-1.7 V
Collector Emitter Voltage (VCEO)80 V
Current Rating-3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-7 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min12
Max Breakdown Voltage110 V
Max Collector Current3 A
Max Frequency50 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation1.5 W
Schedule B8541290080
Transition Frequency50 MHz
Voltage Rating (DC)-80 V
Dimensions
Height11 mm
Length8 mm
Width3.25 mm