备用零件
Price @ 1000
$ 0.385
$ 0.353
$ 0.353
Stock
1,039,957
6,304,281
6,304,281
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
DPAK
TO-252-3
TO-252-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-
80 V
80 V
Max Collector Current
8 A
8 A
8 A
Transition Frequency
90 MHz
90 MHz
90 MHz
Collector Emitter Saturation Voltage
1 V
1 V
1 V
hFE Min
40
40
40
Power Dissipation
1.75 W
1.75 W
1.75 W
供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiMJD45H11T4G
Bipolar (BJT) Single Transistor, PNP, 80 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount
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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
onsemiNJVMJD45H11T4G
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
描述
由其分销商提供的 onsemi MJD45H11G 的描述。
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Bipolar Transistors (BJT); MJD45H11G; ON SEMICONDUCTOR; PNP; 3; 80 V; 8 A
8 A, 80 V PNP Power Bipolar Junction Transistor
80V 1.75W 40@4A,1V 8A PNP TO-252 Bipolar Transistors - BJT ROHS
MJD Series 80 V 8 A PNP Complementary Power Transistor - TO-252-3
Trans GP BJT PNP 80V 8A 1750mW 3-Pin(2+Tab) DPAK Tube
TRANSISTOR, PNP, D-PAK; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 90MHz; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor Case Style:
Rf Transistor, Pnp, -80V, 90Mhz, D-Pak; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD45H11G.
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 60 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tube / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.5 / Reflow Temperature Max. °C = 260
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins3
Number of Terminals2
Technical
Collector Base Voltage (VCBO)5 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating-8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency90 MHz
Gain Bandwidth Product90 MHz
hFE Min40
Max Collector Current8 A
Max Frequency90 MHz
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation1.75 W
Schedule B8541290080
Transition Frequency90 MHz
Voltage Rating (DC)-80 V
Dimensions
Height2.38 mm
Length6.73 mm
合规
环境分类
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
合规声明