onsemi MJD253T4G

Name: onsemi MJD253T4G
Brand: onsemi
SKU: MJD253T4G

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

$ 0.235

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Avnet	2	MJD253T4G	5,576	2500						0.168	1d
Newark	3	MJD253T4G	2,667	5	Cut Tape		0.540	0.403	0.367	0.367
Arrow Electronics		MJD253T4G	1,348	1		0.637	0.430	0.316	0.222	0.222
Verical		MJD253T4G	1,348	9			0.430	0.316	0.222	0.162
Rochester Electronics		MJD253T4G	1,555					0.216	0.180	0.160	11h

数据表和文档

下载 onsemi MJD253T4G 的数据表和制造商文档。

Master Electronics

Datasheet8 页9 年前

IHS

onsemi

Newark

Electro Sonic

库存历史记录

3 个月趋势:

+8.20%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi MJD253T4G 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA	封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

onsemiMJD253T4G

onsemiNJVMJD253T4G

Price @ 1000

$ 0.235

$ 0.416

Stock

782,991

177,316

Authorized Distributors

Mount

Case/Package

DPAK

Polarity

PNP

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

4 A

Transition Frequency

40 MHz

Collector Emitter Saturation Voltage

600 mV

hFE Min

Power Dissipation

1.4 W

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-04-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi MJD253T4G 的描述。

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

IHS

Bipolar Transistors (BJT); MJD253T4G; ON SEMICONDUCTOR; PNP; 3; 100 V; 4 A

Maritex

4.0 A, 100 V PNP Bipolar Power Transistor

onsemi

100V 1.4W 40@200mA,1V 4A PNP TO-252 Bipolar Transistors - BJT ROHS

Dasenic

MJD Series 100 V 4 A PNP Complementary Silicon Plastic Power Transistor TO-252-3

Future Electronics

Trans GP BJT PNP 100V 4A 1400mW 3-Pin(2+Tab) DPAK T/R / TRANS PNP 100V 4A DPAK

Win Source

BIP DPAK PNP 4A 100V TR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 40MHz; Power Dissipation Pd: 12.5W; DC Collector Current: -4A; DC Current Gain hFE: 40hFE; Transistor Case S

Farnell