onsemi MJD127G

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

8.0 A, 100 V PNP Darlington Bipolar Power Transistor

Bipolar Transistors (BJT); MJD127G; ON SEMICONDUCTOR; PNP; 3; 100 V; 8 A

MJD Series PNP 20 W 100 V 8 A Surface Mount Darlington Transistor - TO-252-3

Darlington Transistor, Darlington, PNP, 100 V, 1.75 W, 8 A, TO-252 (DPAK), 3 Pins

TRANSISTOR, DARLINGTON, SI, PNP, AMPLIFIER, POWER, VO 100VDC, VI 5VDC, IO 8ADC, PD 20W

BIPOLAR TRANSISTOR, PNP, -100V; Transistor Polarity:PNP; No. of Pins:4Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:AEC-Q101; Collector Emitter Voltage Max:100V RoHS Compliant: Yes

DARLINGTON TRANSISTOR, D-PAK; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: -; Power Dissipation Pd: 1.75W; DC Collector Current: -8A; DC Current Gain hFE: 12hFE; Transistor Case

Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tube / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260