onsemi MJD112-1G

Name: onsemi MJD112-1G
Brand: onsemi
SKU: MJD112-1G

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

$ 0.469

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Distributor		SKU		Min	Pkg
Future Electronics		MJD112-1G	73	50	Tube			0.430	0.405	0.385
Verical	8	MJD112-1G	525	75				0.384	0.384	0.384
Arrow Electronics	2	MJD112-1G	1,290	1		1.546	1.546	0.624	0.526	0.462
Master Electronics		MJD112-1G	43,200	75				0.370	0.362	0.341
Onlinecomponents.com		MJD112-1G	43,200	75	Bulk			0.370	0.362	0.341

数据表和文档

下载 onsemi MJD112-1G 的数据表和制造商文档。

Upverter

Datasheet8 页15 年前

Datasheet8 页20 年前

Master Electronics

Farnell

onsemi

DigiKey

库存历史记录

3 个月趋势:

-2.28%

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onsemiMJD112-1G

onsemiMJD112-001

Price @ 1000

$ 0.469

$ 0.175

Stock

1,068,941

50,237

Authorized Distributors

Mount

Case/Package

TO-251

Polarity

NPN

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

2 A

Transition Frequency

25 MHz

Collector Emitter Saturation Voltage

2 V

hFE Min

200

Power Dissipation

1.75 W

20 W

供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-01-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi MJD112-1G 的描述。

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

IHS

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

onsemi

MJD Series 100 V 2 A Through Hole NPN Complementary Darlington Power Transistor

Future Electronics

ON SEMI MJD112-1G NPN DARLINGTON TRANSISTOR, 2 A 100 V HFE:1000, 3-PIN IPAK

RS (Formerly Allied Electronics)

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.

North Star Micro

TRANSISTOR, NPN, 100V, 2A, TO-251; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 20W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transisto

Farnell

Darlington Transistor, Npn, 100V, Dpak-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Power Dissipation Pd:20W; Dc Collector Current:2A; Rf Transistor Case:To-252 (Dpak); No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD112-1G

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