备用零件
Price @ 1000
$ 0.142
$ 0.106
Stock
608,888
1,017,617
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
Max Collector Current
1 A
1 A
Transition Frequency
130 MHz
130 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
120
120
Power Dissipation
800 mW
800 mW
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-01-01
Lifecycle StatusEOL (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
相关零件
onsemiKSD471AGTA
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
onsemiKSD471AYTA
Transistor, bjt, npn,30V V(Br)Ceo,1A I(C),to-92 Rohs Compliant: Yes |Onsemi KSD471AYTA
onsemiKSD471ACGTA
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
描述
由其分销商提供的 onsemi KSD471ACYTA 的描述。
Bipolar (BJT) Transistor NPN 30 V 1 A 130MHz 800 mW Through Hole TO-92-3
Transistor, bjt, npn,30V V(Br)Ceo,1A I(C),to-92 Rohs Compliant: Yes |Onsemi KSD471ACYTA
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
30V 800mW 1A 130MHz 500mV@1A100mA NPN +150¡Í@(Tj) TO-92 Bipolar Transistors - BJT ROHS
TRANS NPN 30V 1A TO-92 / Trans GP BJT NPN 30V 1A 800mW 3-Pin TO-92 Fan-Fold
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min120
Max Breakdown Voltage30 V
Max Collector Current1 A
Max Frequency1 MHz
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation800 mW
Transition Frequency130 MHz
Voltage Rating (DC)30 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm