供应链
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-07
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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MOSFET P-CH 60V 1.17A SOT223-4 P-Channel 60 V 1.17A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
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MOSFET P-CH 100V 1A SOT223-4 P-Channel 100 V 1A (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4-21
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MOSFET N-CH 100V 1.1A SOT223-4 N-Channel 100 V 1.1A (Ta) 1.79W (Ta) Surface Mount PG-SOT223-4
NXP SemiconductorsPMT200EN,115
Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 onsemi IRLM220ATF 的描述。
Power MOSFET, N-Channel, A-FET, 200 V, 1.13 A, 800 mΩ, SOT-223
Trans MOSFET N-CH 200V 1.13A 4-Pin(3+Tab) SOT-223 T/R
MOSFET, N-CH, 200V, 1.13A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.13A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.8oh; Available until stocks are exhausted Alternative available
N-Ch/Ll/200V/1.13A/0.8Ohm@vgs=5V Rohs Compliant: Yes |Onsemi IRLM220ATF
MOSFET N-CH 200V 1.13A SOT223-4
Power Field-Effect Transistor, 1.13A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
200V 1.13A 800m´Î@5V570mA 2W 100V@250uA 8pF@25V N Channel 330pF@25V 10.3nC@5V -55¡Í~+150¡Í@(Tj) SOT-223 MOSFETs ROHS
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight188 mg
Technical
Continuous Drain Current (ID)1.13 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance430 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation2 W
Rds On Max800 mΩ
Rise Time24 ns
Turn-Off Delay Time6 ns
Turn-On Delay Time6 ns