供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-09-01
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2014-06-30
LTD Date2014-12-31
相关零件
NXP SemiconductorsPMT200EN,115
Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
NXP SemiconductorsPMT200EN,135
Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 NXP Semiconductors PMT29EN,115 的描述。
Trans MOSFET N-CH 30V 6A 4-Pin(3+Tab) SOT-223 T/R
Small Signal Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Compliant Surface Mount 40 ns Lead Free Tape & Reel (TR) 28 ns 29 mΩ TO-261-4
Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 6A Ta 820mW Ta 8.33W Tc 30V -55C~150C TJ
30 V, 6 A N-channel Trench MOSFET
制造商别名
NXP Semiconductors 在全球拥有多个品牌，分销商可将其用作替代名称。NXP Semiconductors 也可称为以下名称：
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
技术规格
Physical
Case/PackageTO-261-4
Contact PlatingTin
MountSurface Mount
Number of Pins73
Technical
Continuous Drain Current (ID)6 A
Drain to Source Resistance29 MΩ
Drain to Source Voltage (Vdss)30 V
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance492 pF
Max Operating Temperature150 °C
Max Power Dissipation8.33 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1.76 W
Rds On Max29 mΩ
Rise Time28 ns
Turn-Off Delay Time94 ns
Turn-On Delay Time5 ns