onsemi IRF840B

Name: onsemi IRF840B
Brand: onsemi
SKU: IRF840B

Trans MOSFET N-CH 500V 8A 3-Pin (3+Tab) TO-220 Rail

Obsolete

数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
Avnet	IRF840B	0	1K							18h
Component Stockers USA	IRF840B	23,026			0.320	0.310	0.310	0.300	0.300	>1wk
Win Source	WS-IRF840B	2,000	65				0.794	0.530	0.530	16h
Worldway Electronics	IRF840B	24,644	7	Tube		0.095	0.092	0.088	0.088	14h
Chipsmall Limited	IRF840B	60,000	1		0.558	0.372	0.223	0.186	0.186	21h

数据表和文档

下载 onsemi IRF840B 的数据表和制造商文档。

官方数据表4 年前

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-04-19

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 onsemi IRF840B 的描述。

Trans MOSFET N-CH 500V 8A 3-Pin (3+Tab) TO-220 Rail

Verical

500 V N-CHANNEL MOSFET Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):800mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes

Newark

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):650mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:134W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Current Temperature:25°C; Device Marking:IRF840B; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:800mohm; Package / Case:TO-220; Power Dissipation Pd:134W; Power Dissipation Pd:134W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC