供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-19
Lifecycle StatusObsolete (Last Updated: 7 months ago)
相关零件
STMicroelectronicsSTP10N62K3
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220 package
InfineonSPP07N60C3XKSA1
Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220 Tube / Cool MOS™ Power Transistor
描述
由其分销商提供的 onsemi IRF840B 的描述。
Trans MOSFET N-CH 500V 8A 3-Pin (3+Tab) TO-220 Rail
500 V N-CHANNEL MOSFET Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):800mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):650mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:134W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Current Temperature:25°C; Device Marking:IRF840B; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:800mohm; Package / Case:TO-220; Power Dissipation Pd:134W; Power Dissipation Pd:134W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8 A
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage500 V
Element ConfigurationSingle
Fall Time75 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation134 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation134 W
Rds On Max800 mΩ
Resistance800 mΩ
Rise Time65 ns
TerminationThrough Hole
Turn-Off Delay Time125 ns
Dimensions
Width10.67 mm