供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-11-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
InfineonIPB80N06S4L07ATMA2
60V, N-Ch, 6.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
InfineonIPB90N06S4L04ATMA2
Power MOSFET, N Channel, 60 V, 90 A, 0.0027 ohm, TO-263 (D2PAK), Surface Mount
描述
由其分销商提供的 onsemi HUF76437S3S 的描述。
MOSFET N-CH 60V 71A D2PAK
64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Power Field-Effect Transistor, 71A I(D), 60V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)71 A
Current Rating64 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance2.23 nF
Max Operating Temperature175 °C
Max Power Dissipation155 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation155 W
Rds On Max14 mΩ
Rise Time133 ns
Turn-Off Delay Time43 ns
Voltage Rating (DC)60 V