价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | HUF75639S3ST | 796 | 1 | Cut Tape | ||||||||
| Verical | HUF75639S3ST | 96,165 | 200 | |||||||||
| Rochester Electronics | HUF75639S3ST | 110,726 | 11h | |||||||||
| Onlinecomponents.com | HUF75639S3ST | 0 | 200 | Bulk | ||||||||
| Future Electronics | HUF75639S3ST | 0 | 800 | Tape & Reel |
备用零件
Price @ 1000
$ 1.257
$ 1.294
Stock
482,835
170,686
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
-
-
Rds On Max
25 mΩ
25 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
200 W
Input Capacitance
2 nF
2 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi HUF75639S3ST 的描述。
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 56A D2PAK
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
200W(Tc) 20V 4V@ 250¦ÌA 130nC@ 20 V 1N 100V 25m¦¸@ 56A,10V 56A 2nF@25V D2PAK,TO-263 5.08mm
Transistor, mosfet, n-Channel,100V V(Br)Dss,56A I(D),to-263Ab Rohs Compliant: Yes |Onsemi HUF75639S3ST
N-Channel 100 V 0.025 Ohm UltraFET Power Mosfet - TO-263AB
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)56 A
Current Rating56 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation200 W
Rds On Max25 mΩ
Resistance25 mΩ
Rise Time60 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)100 V
Dimensions
Height5.08 mm