onsemi HUF75329D3
$ 0.728
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
相关零件
Rochester ElectronicsIPS105N03LG
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr
描述
由其分销商提供的 onsemi HUF75329D3 的描述。
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 20A IPAK
PWR MOS ULTRAFET 55V/20A/0.026OHMS N-CHANNEL TO-251AA
MOSFET N-CH 55V 20A IPAK
Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.06 nF
Max Operating Temperature175 °C
Max Power Dissipation128 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation128 W
Rds On Max26 mΩ
Rise Time30 ns
Turn-Off Delay Time10 ns
Voltage Rating (DC)55 V