Rochester Electronics IPS105N03LG

Name: Rochester Electronics IPS105N03LG
Brand: Rochester Electronics
SKU: IPS105N03LG

MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Dr

$ 0.183

Obsolete

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价格与库存

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Distributor	SKU		Min	Pkg
Rochester Electronics	IPS105N03LG	18,615					0.220	0.183	0.163	15h
Verical	IPS105N03L G	17,115	1642						0.204
DigiKey Marketplace	2156-IPS105N03LG-ND	6,615	1090	Bulk					0.280
Farnell	IPS105N03L G	0	1		0.648*	0.648*	0.499*	0.335*	0.294*	15h
Win Source	WS-IPS105N03L G	1,030	515					0.097	0.065	16h

数据表和文档

下载 Rochester Electronics IPS105N03LG 的数据表和制造商文档。

官方数据表7 年前

库存历史记录

3 个月趋势:

-14.29%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-10-23

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Rochester Electronics IPS105N03LG 的描述。

MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr

Newark

Trans MOSFET N-CH 30V 35A 3-Pin(3+Tab) TO-251 Tube

Verical

N-Channel PowerTrench® MOSFET Logic Level 40 V, 10 A, 2.1 mΩ

Win Source

Compliant Through Hole 6.22 mm 2.39 mm 6.73 mm 2.4 ns 14 ns No SVHC

Augswan

Power Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

IHS

MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:38W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-251; No. of Pins:3; Current Id Max:35A; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC