onsemi HGTP20N60A4

Name: onsemi HGTP20N60A4
Brand: onsemi
SKU: HGTP20N60A4

Trans IGBT Chip N=-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-220AB Rail

$ 1.54

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Rochester Electronics	HGTP20N60A4	11					1.720	1.540	1.450	2h
Farnell	HGTP20N60A4	0	1		4.112*	4.112*	2.682*	2.573*	2.573*	1h
element14 APAC	HGTP20N60A4	0	1		4.371*	2.927*	2.343*	2.154*	2.154*	14h
Win Source	WS-HGTP20N60A4	460	30				1.499	1.218	1.218	3h
Worldway Electronics	HGTP20N60A4	17,451	7	Tube		0.526	0.509	0.483	0.483	2h

数据表和文档

下载 onsemi HGTP20N60A4 的数据表和制造商文档。

onsemi

Datasheet10 页6 年前

Datasheet0 页0 年前

IHS

element14 APAC

Fairchild Semiconductor

Farnell

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-03-07

Lifecycle StatusObsolete (Last Updated: 4 days ago)

LTB Date2021-10-08

LTD Date2022-04-08

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

描述

由其分销商提供的 onsemi HGTP20N60A4 的描述。

Trans IGBT Chip N=-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-220AB Rail

Verical

HGTP20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-220AB

Future Electronics

The HGTP20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

Fairchild Semiconductor

IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC