onsemi HGTG12N60A4

Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail

600V, SMPS Series N-Channel IGBTs | IGBT 600V 54A 167W TO247

Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247

Single Igbt, 600V, 54A; Corriente De Colector Dc:54A; Tensión De Saturación Colector-Emisor Vce(On):2V; Disipación De Potencia Pd:167W; Tensión Colector Emisor V(Br)Ceo:600V; Núm. De Contactos:3; Temperatura De Trabajo Máx.:150°C |Onsemi HGTG12N60A4

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.