供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-07
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
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描述
由其分销商提供的 onsemi HGTD7N60C3S9A 的描述。
Trans IGBT Chip N-CH 600V 14A 60000mW 3-Pin(2+Tab) DPAK T/R / IGBT 600V 14A 60W TO252AA
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
POWER IGBT UFS 7A 600V TF=275 MAX TO-252 TAPE AND REEL
14A,600V, UFS Series N-Channel IGBTs
60W 1.6V 600V 14A TO-252AA 6.6mm*6.1mm*2.3mm
INSULATED GATE BIPOLAR TRANSISTO
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)600 V
Current Rating14 A
Element ConfigurationSingle
Fall Time275 ns
Max Collector Current14 A
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-40 °C
Number of Elements1
Power Dissipation60 W
Voltage Rating (DC)600 V