备用零件
Price @ 1000
$ 0.195
Stock
546,826
2,041,827
Authorized Distributors
2
6
Mount
Surface Mount
-
Case/Package
TO-236-3
SOT-23-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
60 V
Max Collector Current
2 A
2 A
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
320 mV
-
hFE Min
100
100
Power Dissipation
500 mW
540 mW
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1998-07-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
相关零件
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AA
描述
由其分销商提供的 onsemi FSB619 的描述。
NPN 500 mW 50 V 2 A Surface Mount Low Saturation Transistor - SOT-23-3
Supplied as a Tape, ON Semi FSB619 NPN Transistor, 2 A, 50 V, 3-Pin SOT-23
NPN LOW-SATURATION TRANSISTOR Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 50V 2A 3-Pin SuperSOT T/R
320mV@ 50mA,2A NPN 500mW 5V 100nA 50V 50V 2A SOT-23-3 1.02mm
These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage320 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min100
Max Breakdown Voltage25 V
Max Collector Current2 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation500 mW
Transition Frequency100 MHz
Voltage Rating (DC)50 V
Dimensions
Height940 µm
Length2.92 mm
Width1.4 mm