备用零件
Price @ 1000
$ 1.339
Stock
238,996
82,107
Authorized Distributors
2
2
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
SC
Drain to Source Voltage (Vdss)
900 V
900 V
Continuous Drain Current (ID)
6 A
4.1 A
Threshold Voltage
5 V
-
Rds On Max
2.3 Ω
2.3 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
56 W
90 W
Input Capacitance
1.77 nF
1.55 nF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-05
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
相关零件
STMicroelectronicsSTF8NK100Z
STF8NK100Z N-CHANNEL MOSFET TRANSISTOR, 6.5 A, 1000 V, 3-PIN TO-220FP
STMicroelectronicsSTP6NK90ZFP
N-channel 900 V, 1.56 Ohm, 5.8 A TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTP7NK80ZFP
STP7NK80ZFP N-CHANNEL MOSFET TRANSISTOR, 5.2 A, 800 V, 3-PIN TO-220FP
描述
由其分销商提供的 onsemi FQPF6N90C 的描述。
Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-220F
N-Channel 900 V 2.3 Ohm Through Hole Mosfet - TO-220F
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Variants: Enhancement mode Power dissipation: 56 W
Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 900V; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 56
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance2.3 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.77 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation56 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation56 W
Rds On Max2.3 Ω
Recovery Time630 ns
Resistance2.3 Ω
Rise Time90 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time55 ns
Turn-On Delay Time35 ns
Dimensions
Height19.5 mm
Length10.16 mm
Width4.7 mm