备用零件
此零件
备用零件
Price @ 1000
$ 0.669
$ 0.345
Stock
1,148,876
1,669,451
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220
Drain to Source Voltage (Vdss)
400 V
-
Continuous Drain Current (ID)
6 A
5.5 A
Threshold Voltage
-
-
Rds On Max
1 Ω
-
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
73 W
73 W
Input Capacitance
625 pF
-
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-05-21
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
描述
由其分销商提供的 onsemi FQP6N40C 的描述。
Power MOSFET, N-Channel, QFET®, 400 V, 6 A, 1.0 Ω, TO-220
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,6A I(D),TO-220
Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB Rail
QFET 400 V N-CHANNEL MOSFET Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 400V, 6A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 0.83ohm; R; Available until stocks are exhausted Alternative available
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)6 A
Current Rating6 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance625 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation73 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation73 W
Rds On Max1 Ω
Rise Time65 ns
Schedule B8541290080
Turn-Off Delay Time21 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)400 V
Dimensions
Height20.4 mm
Length10.1 mm
Width4.7 mm