onsemi FQP50N06L

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220

Trans MOSFET N-CH 60V 52.4A 3-Pin(3+Tab) TO-220AB Rail

N-Channel 60 V 0.022 Ohm Flange Mount Mosfet - TO-220

Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:52.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:121W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:52A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-220; Power Dissipation Pd:121W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.