onsemi FQP33N10

Name: onsemi FQP33N10
Brand: onsemi
SKU: FQP33N10

Power MOSFET, N-Channel, QFET®, 100 V, 33 A, 52 mΩ, TO-220

EOL

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Distributor		SKU		Min	Pkg
Avnet		FQP33N10	81	285							15h
Flip Electronics		FQP33N10	81								6d
element14 APAC		FQP33N10	0	1		1.734*	1.371*	1.166*	0.851*	0.812*	1h
Farnell	2	FQP33N10	0	1		2.101*	1.870*	1.437*	0.892*	0.892*	1d
Microchip USA		FQP33N10	244	150	Tube				12.889	12.889	5h

数据表和文档

下载 onsemi FQP33N10 的数据表和制造商文档。

Upverter

Technical Drawing1 页6 年前

element14 APAC

Newark

onsemi

Fairchild Semiconductor

库存历史记录

3 个月趋势:

+0.00%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-05-24

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FQP33N10 的描述。

Power MOSFET, N-Channel, QFET®, 100 V, 33 A, 52 mΩ, TO-220

onsemi

N-Channel 100 V 0.052 Ohm Flange Mount Mosfet - TO-220

Future Electronics

100 V N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:127W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:33A; Device Marking:FQP33N10; On State Resistance Max:52mohm; Package / Case:TO-220; Power Dissipation Pd:127W; Power Dissipation Pd:127W; Pulse Current Idm:132A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor