相关零件
InfineonIPI084N06L3GXKSA1
MOSFET N-CH 60V 50A TO262-3 / N-Channel 60 V 50A (Tc) 79W (Tc) Through Hole PG-TO262-3-1
描述
由其分销商提供的 onsemi FQI47P06TU 的描述。
MOSFET P-CH 60V 47A I2PAK
Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
P-CHANNEL POWER MOSFET
MOSFETs 60V P-Channel QFET
MISCELLANEOUS MOSFETS;
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-47A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I2PAK ;RoHS Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)47 A
Current Rating-47 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance26 mΩ
Element ConfigurationSingle
Fall Time195 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.6 nF
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.75 W
Rds On Max26 mΩ
Rise Time450 ns
Turn-Off Delay Time100 ns
Voltage Rating (DC)-60 V