价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | 2SJ661-1E | 400 | 242 | |||||||||
| Rochester Electronics | 2SJ661-1E | 596 | 21h | |||||||||
| Farnell | 2SJ661-1E | 0 | 150 | Tube | 20h | |||||||
| Win Source | WS-2SJ661-1E | 20 | 15 | 22h | ||||||||
| Worldway Electronics | 2SJ661-1E | 29,369 | 7 | Tube | 21h |
供应链
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-28
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2022-01-08
LTD Date2022-07-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
相关零件
InfineonIPI084N06L3GXKSA1
MOSFET N-CH 60V 50A TO262-3 / N-Channel 60 V 50A (Tc) 79W (Tc) Through Hole PG-TO262-3-1
InfineonAUIRFZ46NL
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
InfineonIPI029N06NAKSA1
N-Channel 60 V 100 A 3 W Through Hole OptiMOSTM Power Transistor - PG-TO262-3
描述
由其分销商提供的 onsemi 2SJ661-1E 的描述。
Power MOSFET, P-Channel, -60V, -38A, 39mΩ P-Channel Power MOSFET, -60V, -38A, 39mOhm
Trans MOSFET P-CH Si 60V 38A 3-Pin(3+Tab) I2PAK Tube
Pch 4V Drive Series/Tube Rohs Compliant: Yes |Onsemi 2SJ661-1E
MOSFET, P-CH, 60V, 38A, TO-262;
60V 38A 29.5m´Î@10V19A 65W 2.6V@1mA 335pF@20V P Channel 4.36nF@20V 80nC@10V -55¡Í~+150¡Í@(Tj) TO-263-3 MOSFETs ROHS
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Technical
Continuous Drain Current (ID)38 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance29.5 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time195 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.36 nF
Max Operating Temperature150 °C
Max Power Dissipation1.65 W
Min Operating Temperature-55 °C
Number of Channels1
Rds On Max39 mΩ
Rise Time285 ns
Turn-Off Delay Time295 ns
Turn-On Delay Time33 ns