onsemi FQI11N40TU
$ 1.046
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-10-20
LTD Date2008-04-20
描述
由其分销商提供的 onsemi FQI11N40TU 的描述。
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 11.4A Tc 3.13W Ta 147W Tc 400V -55C~150C TJ
MOSFET N-CH 400V 11.4A I2PAK
Power Field-Effect Transistor, 11.4A I(D), 400V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
N-CHANNEL POWER MOSFET
MOSFETs 400V N-Channel QFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11.4 A
Current Rating11.4 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation147 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max480 mΩ
Rise Time100 ns
Turn-Off Delay Time60 ns
Voltage Rating (DC)400 V