供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-06-04
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
STMicroelectronicsSTD1NK80ZT4
N-channel 800 V, 13 Ohm typ., 1 A SuperMESH Zener protected Power MOSFET in a DPAK package
onsemiFQD2N60CTF
Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STMicroelectronicsSTD1HN60K3
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package
STMicroelectronicsSTD3NK80ZT4
N-CHANNEL 800V - 3.8 Ohm - 2.5A DPAK Zener-Protected SuperMESH™ Power MOSFET
描述
由其分销商提供的 onsemi FQD1N80TM 的描述。
N-Channel Power MOSFET, QFET®, 800 V, 1.0 A, 20 Ω, DPAK
N-Channel 800 V 20 Ohm Surface Mount Mosfet - TO-252-3
800 V N-CHANNEL MOSFET Power Field-Effect Transistor, 1A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)1 A
Current Rating1 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance20 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance195 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max20 Ω
Resistance20 Ω
Rise Time25 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time15 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)800 V
Dimensions
Height2.517 mm
Length6.6 mm
Width6.1 mm