供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-09-13
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2008-03-11
LTD Date2008-09-11
相关零件
VishayIRF620STRLPBF
3W(Ta) 50W(Tc) 20V 4V@250µA 14nC@10V N-Ch MOSFET 200V 800mΩ@3.1A,10V 5.2A 260pF@25V D2PAK SMD
描述
由其分销商提供的 onsemi FQB8N25TM 的描述。
Trans MOSFET N-CH 250V 8A 3-Pin(2+Tab) D2PAK T/R
MOSFET N-CH 250V 8A D2PAK
3.13W(Ta)，87W(Tc) 5V@ 250µA 15nC@ 10V 1individualNChannel 250V 550mΩ@ 4A,10V 530pF@25V D2PAK SMD mount
Power Field-Effect Transistor, 8A I(D), 250V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
MOSFETs 250V N-Channel QFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)8 A
Current Rating8 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time42 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance530 pF
Max Operating Temperature150 °C
Max Power Dissipation87 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max550 mΩ
Rise Time95 ns
Turn-Off Delay Time11 ns
Voltage Rating (DC)250 V