供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-08-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14
相关零件
InfineonAUIRF6218S
Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
描述
由其分销商提供的 onsemi FDB42AN15A0 的描述。
TO-263AB, SINGLE, N-CH, 150V, 42MOHM ULTRAFET TRENCH MOSFET
N-Channel PowerTrench MOSFET | MOSFET N-CH 150V 35A TO-263AB
TRANS MOSFET N-CH 150V 5A 3-PIN TO-263AB
Power Field-Effect Transistor, 5A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFETs Discrete Auto N-Ch PowerTrench
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)5 A
Current Rating35 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation150 W
Rds On Max42 mΩ
Rise Time19 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)150 V
Dimensions
Height5.08 mm