onsemi FQB22P10TM

Name: onsemi FQB22P10TM
Brand: onsemi
SKU: FQB22P10TM

Transistor, P-channel, Qfet Mosfet, -100V, 22A, 125 Mohm, 175C Max, D2PAK

$ 0.903

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Distributor		SKU		Min	Pkg
Avnet	3	FQB22P10TM	5,600	800					0.894	0.831	2d
Newark	2	FQB22P10TM	1,568	1	Cut Tape	3.050	2.020	1.860	1.860	1.860
Arrow Electronics	2	FQB22P10TM	492	1		2.364	1.656	1.200	1.200	1.200
Verical	3	FQB22P10TM	2,400	800					0.844	0.844
Master Electronics		FQB22P10TM	800	25				1.645	0.903	0.786

数据表和文档

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JRH Electronics

Datasheet0 页0 年前

Upverter

IHS

onsemi

Fairchild Semiconductor

库存历史记录

3 个月趋势:

+19.52%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-07-18

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FQB22P10TM 的描述。

TRANSISTOR, P-CHANNEL, QFET MOSFET, -100V, 22A, 125 MOHM, 175C MAX, D2PAK

RS (Formerly Allied Electronics)

Trans MOSFET P-CH 100V 22A 3-Pin(2+Tab) D2PAK T/R / MOSFET P-CH 100V 22A D2PAK

Win Source

Power MOSFET, P Channel, 100 V, 22 A, 0.125 ohm, TO-263 (D2PAK), Surface Mount

Avnet

P-Channel MOSFET, QFET® -100V, -22A, 125mΩ

onsemi

Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor

MOSFET, P CH, -100V, -22A, TO-263AB-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -22A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.096ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 3.75W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Current Id Max: 15.6mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 88A; Rate of Voltage Change dv / dt: 6V/ns; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V

Farnell