Infineon IRF9540NSTRLPBF

Name: Infineon IRF9540NSTRLPBF
Brand: Infineon
SKU: IRF9540NSTRLPBF

Single P-Channel 100 V 117 mOhm 110 nC HEXFET® Power Mosfet - D2PAK

$ 0.7

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Distributor		SKU		Min	Pkg
Avnet	2	IRF9540NSTRLPBF	133,600	800					0.612	0.601	14h
Newark	3	IRF9540NSTRLPBF	4,148	1	Cut Tape	0.624	0.624	0.624	0.624	0.624
Future Electronics	2	IRF9540NSTRLPBF	7,200	800	Tape & Reel				0.700	0.680
Rutronik		TMOSP12078	800	800					0.745	0.596	20h
DigiKey	3	IRF9540NSTRLPBFCT-ND	19,458	1	Cut Tape	2.910	1.865	1.270	0.959	0.759

数据表和文档

下载 Infineon IRF9540NSTRLPBF 的数据表和制造商文档。

Newark

Datasheet11 页20 年前

Datasheet11 页23 年前

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

+26.90%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-08-05

Lifecycle StatusProduction (Last Updated: 5 months ago)

描述

由其分销商提供的 Infineon IRF9540NSTRLPBF 的描述。

Single P-Channel 100 V 117 mOhm 110 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.117Ohm;ID -23A;D2Pak;PD 110W;VGS +/-20V

RS (Formerly Allied Electronics)

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

Trans MOSFET P-CH 100V 23A 3-Pin(2+Tab) D2PAK T/R / MOSFET P-CH 100V 23A D2PAK

Win Source

-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

MOSFET, P-CHANNEL, -100V, -23A, 117 MOHM, 64.7 NC QG, D2-PAK

Avnet

Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

Infineon

Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:23A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:4V; Power Dissipation:140W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRF9540NSTRLPBF.

Newark

MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:100V; On Resistance Rds(on):117mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-262AB; Current Id Max:-23A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:76A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 23 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 117 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 64 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

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