供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-19
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2008-06-06
LTD Date2008-12-06
描述
由其分销商提供的 onsemi FQB19N10LTM 的描述。
Trans MOSFET N-CH 100V 19A 3-Pin(2+Tab) D2PAK T/R
MOSFET N-CH 100V 19A D2PAK
3.75W(Ta)£¬75W(Tc) 2V@ 250¦ÌA 18nC@ 5V 1individualNChannel 100V 100m¦¸@ 9.5A,10V 870pF@25V D2PAK SMD mount
Power Field-Effect Transistor, 19A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
MOSFETs 100V N-Ch Log Level
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)19 A
Current Rating19 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time140 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance870 pF
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.75 W
Rds On Max100 mΩ
Rise Time410 ns
Turn-Off Delay Time20 ns
Voltage Rating (DC)100 V