供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
相关零件
VishayIRF644STRLPBF
3.1W(Ta),125W(Tc) 20V 4V@ 250¦ÌA 68nC@ 10 V 1N 250V 280m¦¸@ 8.4A,10V 14A 1.3nF@25V D2PAK,TO-263
VishayIRF644STRRPBF
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 14A Tc 14A 3.1W 49ns
描述
由其分销商提供的 onsemi FQB14N30TM 的描述。
TRANS MOSFET N-CH 300V 14.4A 3PIN D2PAK
Power Field-Effect Transistor, 14.4A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
MOSFETs 300V N-Channel QFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)14.4 A
Current Rating14.4 A
Drain to Source Breakdown Voltage300 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)300 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.36 nF
Max Operating Temperature150 °C
Max Power Dissipation147 W
Min Breakdown Voltage300 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max290 mΩ
Rise Time145 ns
Turn-Off Delay Time45 ns
Voltage Rating (DC)300 V