价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FQB25N33TM | 1,600 | 233 | |||||||||
| Rochester Electronics | FQB25N33TM | 17,500 | 10h | |||||||||
| Avnet | FQB25N33TM | 0 | 800 | 12h | ||||||||
| Win Source | WS-FQB25N33TM | 9,620 | 70 | 11h | ||||||||
| Worldway Electronics | FQB25N33TM | 6,781 | 7 | Tape & Reel | 9h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-09-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
相关零件
VishayIRF644STRRPBF
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 14A Tc 14A 3.1W 49ns
描述
由其分销商提供的 onsemi FQB25N33TM 的描述。
TRANS MOSFET N-CH 330V 25A 3PIN D2PAK
Power Field-Effect Transistor, 25A I(D), 330V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs 330V N-Channel MOSFET
MOSFET, N, SMD, TO-263; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:330V; Current, Id Cont:25A; Resistance, Rds On:0.23ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:D2-PAK; Termination Type:SMD; No. of Pins:2; Power Dissipation:250W; Power Dissipation on 1 Sq. PCB:3.1W; Voltage, Vds Max:330V; Voltage, Vgs th Max:5V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)25 A
Current Rating25 A
Drain to Source Breakdown Voltage330 V
Drain to Source Resistance230 mΩ
Drain to Source Voltage (Vdss)330 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.01 nF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage330 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.1 W
Rds On Max230 mΩ
Rise Time100 ns
Turn-Off Delay Time90 ns
Voltage Rating (DC)330 V