onsemi FQA70N10

Name: onsemi FQA70N10
Brand: onsemi
SKU: FQA70N10

N-Channel Power MOSFET, QFET®, 100 V, 70 A, 23 mΩ, TO-3P

$ 1.51

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min
Avnet		FQA70N10	450	30			1.550	1.393	1.393	1d
Newark	2	FQA70N10	450	30			2.000	1.980	1.980
Arrow Electronics	2	FQA70N10	1,900	1	1.720	1.478	1.478	1.435	1.435
Verical	4	FQA70N10	11,280	30			1.498	1.416	1.416
Rochester Electronics		FQA70N10	746				1.390	1.240	1.170	6h

数据表和文档

下载 onsemi FQA70N10 的数据表和制造商文档。

IHS

Datasheet8 页2 年前

Datasheet8 页12 年前

Newark

onsemi

Factory Futures

Farnell

库存历史记录

3 个月趋势:

-4.66%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FQA70N10 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
EE Concierge	符号封装
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-10-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FQA70N10 的描述。

N-Channel Power MOSFET, QFET®, 100 V, 70 A, 23 mΩ, TO-3P

onsemi

N-Channel 100 V 0.023 Ohm Through Hole Mosfet - TO-3PN

Future Electronics

MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:214W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:214W; Power Dissipation Pd:214W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor