onsemi FOD817DSD

Name: onsemi FOD817DSD
Brand: onsemi
SKU: FOD817DSD

Optocoupler, Transistor Output, 1 Channel, Surface Mount DIP, 4 Pins, 50 mA, 5 kV, 300 %

$ 0.154

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Distributor		SKU		Min	Pkg
Avnet	2	FOD817DSD	67,000	1K					0.089	0.084	13h
Newark	3	FOD817DSD	249	1	Cut Tape	0.515	0.351	0.252	0.252	0.252
Verical	4	FOD817DSD	1,157	11				0.117	0.117	0.117
Arrow Electronics	3	FOD817DSD	7,996	1		0.470	0.318	0.228	0.171	0.139
Future Electronics	3	FOD817DSD	58,000	1K	Tape & Reel				0.082	0.078

数据表和文档

下载 onsemi FOD817DSD 的数据表和制造商文档。

IHS

Datasheet12 页2 年前

Datasheet0 页0 年前

Master Electronics

Upverter

TME

onsemi

库存历史记录

3 个月趋势:

+86.62%

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onsemiFOD817DSD

onsemiFOD817D3SD

Price @ 1000

$ 0.154

$ 0.112

Stock

4,491,689

3,119,505

Authorized Distributors

Case/Package

SMD/SMT

Number of Pins

Number of Channels

Isolation Voltage

5000 Vrms

Current Transfer Ratio

300 %

Rise Time

18 µs

Fall Time

18 µs

Output Voltage

70 V

Output Current

Forward Voltage

1.4 V

Forward Current

50 mA

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.40.80.00

Introduction Date2004-04-28

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FOD817DSD 的描述。

Optocoupler, Transistor Output, 1 Channel, Surface Mount DIP, 4 Pins, 50 mA, 5 kV, 300 %

Avnet Silica

Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD Black Reel | OPTOISOLATOR 5KV TRANSISTOR 4SMD

Win Source

DIP4 Surface Mount Single Channel 70 V 5000 Vrms Phototransistor Optocoupler

Future Electronics

Transistor Output Optocoupler, 1-Element, 5000V Isolation

IHS

OPTOCOUPLER, TRANSISTOR, 5KV, SMDIP-4; No. of Channels: 1 Channel; Optocoupler Case Style: Surface Mount DIP; No. of Pins: 4Pins; Forward Current If Max: 50mA; Isolation Voltage: 5kV; CTR Min: 300%; Collector Emitter Voltage V

Farnell

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Fairchild Semiconductor

Collector-Emitter Voltage (VCEO) Max. V = 70 / Collector Current Max. mA = 50 / Power Dissipation (Pd) mW = 150 / Reverse Voltage (Vr) V = 6 / Package Type = DIP-4 / Collector-Emitter Saturation Voltage Max. mV = 200 / Emitter−Collector Voltage (VECO) Max. V = 6 / Forward Voltage (Vf) Max. V = 1.4 / Output Type = Phototransistor / Isolation Voltage kV = 5 / Forward Current (If) Max. mA = 50 / Current Transfer Ratio (CTR) Min. % = 300 / Operating Temperature Max. °C = 110 / Operating Temperature Min. °C = -55 / Current Transfer Ratio (CTR) Max. % = 600 / Channels = 1

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