价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FOD817C3SD | 11,000 | 1K | 12h | ||||||||
| Newark | FOD817C3SD | 1,606 | 1 | Cut Tape | ||||||||
| Verical | FOD817C3SD | 745 | 11 | |||||||||
| Arrow Electronics | FOD817C3SD | 745 | 1 | |||||||||
| Future Electronics | FOD817C3SD | 7,000 | 1K | Tape & Reel |
备用零件
Price @ 1000
$ 0.112
$ 0.154
Stock
1,405,950
129,617
Authorized Distributors
6
6
Case/Package
SMD/SMT
SMD/SMT
Number of Pins
4
4
Number of Channels
1
1
Isolation Voltage
5000 Vrms
5000 Vrms
Current Transfer Ratio
200 %
200 %
Rise Time
18 µs
18 µs
Fall Time
18 µs
18 µs
Output Voltage
70 V
70 V
Output Current
-
-
Forward Voltage
1.4 V
1.4 V
Forward Current
50 mA
50 mA
供应链
Country of OriginThailand
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2004-04-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FOD817C3SD 的描述。
Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD Black T/R
FOD817 Series 1 Channel 70 V 5 kVrms SMT Phototransistor Optocoupler -DIP-4
Transistor Output Optocoupler, 1-Element, 5000V Isolation
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSMD/SMT
Contact PlatingTin
MountSurface Mount
Number of Pins4
Weight0 g
Technical
Collector Emitter Breakdown Voltage70 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)70 V
Current Transfer Ratio200 %
Dark Current100 nA
Fall Time18 µs
Forward Current50 mA
Forward Voltage1.4 V
Input Current50 mA
Isolation Voltage5000 Vrms
Max Collector Current50 mA
Max Input Current50 mA
Max Junction Temperature (Tj)125 °C
Max Operating Temperature110 °C
Max Output Voltage70 V
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output Current per Channel50 mA
Output Voltage70 V
Power Dissipation200 mW
Reverse Breakdown Voltage6 V
Reverse Voltage6 V
Rise Time18 µs
Schedule B8541408000
Dimensions
Height3.85 mm
Length5.1 mm
Width7 mm