onsemi FOD817B3SD

Name: onsemi FOD817B3SD
Brand: onsemi
SKU: FOD817B3SD

Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD Black T/R

$ 0.137

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制造商页面数据表

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Distributor		SKU		Min	Pkg
Future Electronics	3	FOD817B3SD	72,000	1K	Tape & Reel				0.087	0.082
Avnet		56AC8351	864	1		0.536	0.338	0.258	0.221	0.221	1d
Newark	2	FOD817B3SD	864	1	Cut Tape	0.536	0.366	0.262	0.215	0.215
Arrow Electronics	4	FOD817B3SD	7,506	1		0.539	0.368	0.265	0.195	0.182
Verical	5	FOD817B3SD	804	130					0.044	0.044

数据表和文档

下载 onsemi FOD817B3SD 的数据表和制造商文档。

IHS

Datasheet12 页2 年前

Datasheet0 页0 年前

Upverter

TME

Future Electronics

onsemi

库存历史记录

3 个月趋势:

-11.97%

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onsemiFOD817B3SD

onsemiFOD817B3S

Price @ 1000

$ 0.137

$ 0.117

Stock

2,939,887

2,388,950

Authorized Distributors

Case/Package

SMD/SMT

Number of Pins

Number of Channels

Isolation Voltage

5000 Vrms

Current Transfer Ratio

130 %

Rise Time

18 µs

Fall Time

18 µs

Output Voltage

70 V

Output Current

Forward Voltage

1.4 V

Forward Current

50 mA

供应链

Country of OriginThailand

Harmonized Tariff Schedule (HTS) Code8541.40.80.00

Introduction Date2004-04-28

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FOD817B3SD 的描述。

Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD Black T/R

Avnet Japan

FOD817 Series Single Channel 70 V 5000 Vrms Phototransistor Optocoupler -DIP-4

Future Electronics

Transistor Output Optocoupler, 1-Element, 5000V Isolation

Semicontronic

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Fairchild Semiconductor

OPTOCOUPLER, TRANS. O/P, REEL; No. of Channels:1; Isolation Voltage:5kV; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:70V; Opto Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2013); Approval Bodies:cUL, UL, VDE; Breakover Voltage Min:70V; Current Transfer Ratio Max:260%; Current Transfer Ratio Min:130%; Fall Time tf:18000ns; Operating Temperature Max:110°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +110°C; Output Voltage Max:6V; Rise Time:18000ns

Farnell

Collector-Emitter Voltage (VCEO) Max. V = 70 / Collector Current Max. mA = 50 / Power Dissipation (Pd) mW = 150 / Reverse Voltage (Vr) V = 6 / Package Type = DIP-4 / Collector-Emitter Saturation Voltage Max. mV = 200 / Emitter−Collector Voltage (VECO) Max. V = 6 / Forward Voltage (Vf) Max. V = 1.4 / Output Type = Phototransistor / Isolation Voltage kV = 5 / Forward Current (If) Max. mA = 50 / Current Transfer Ratio (CTR) Min. % = 130 / Operating Temperature Max. °C = 110 / Operating Temperature Min. °C = -55 / Current Transfer Ratio (CTR) Max. % = 260 / Channels = 1

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