onsemi FOD817A3SD

Name: onsemi FOD817A3SD
Brand: onsemi
SKU: FOD817A3SD

Optocoupler, Transistor Output, 1 Channel, Surface Mount DIP, 4 Pins, 50 mA, 5 kV, 80 %

$ 0.122

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Distributor		SKU		Min	Pkg
Avnet	2	95W3206	616	1		0.484	0.289	0.221	0.207	0.207	1d
Newark	2	FOD817A3SD	616	1	Cut Tape	0.484	0.289	0.221	0.193	0.193
Verical	5	FOD817A3SD	19,000	1K					0.142	0.084
Arrow Electronics	3	FOD817A3SD	5,048	1		0.115	0.115	0.115	0.115	0.115
Future Electronics	2	FOD817A3SD	31,000	1K	Tape & Reel				0.093	0.087

数据表和文档

下载 onsemi FOD817A3SD 的数据表和制造商文档。

IHS

Datasheet12 页2 年前

Datasheet0 页0 年前

TME

onsemi

Fairchild Semiconductor

Farnell

库存历史记录

3 个月趋势:

+12.15%

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onsemiFOD817A3SD

onsemiFOD817A3S

Price @ 1000

$ 0.122

$ 0.139

Stock

2,940,708

322,119

Authorized Distributors

Case/Package

SMD/SMT

Number of Pins

Number of Channels

Isolation Voltage

5000 Vrms

Current Transfer Ratio

80 %

Rise Time

18 µs

Fall Time

18 µs

Output Voltage

70 V

Output Current

Forward Voltage

1.4 V

Forward Current

50 mA

供应链

Country of OriginThailand

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.40.80.00

Introduction Date2004-04-28

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FOD817A3SD 的描述。

Optocoupler, Transistor Output, 1 Channel, Surface Mount DIP, 4 Pins, 50 mA, 5 kV, 80 %

Avnet Silica

Phototransistor Optocoupler Transistor Output Optocoupler, 1-Element, 5000V Isolation

ComSIT Distribution GmbH

Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD Black T/R

Avnet Japan

Transistor Output Optocouplers Opto Phototransistor Output SM-DIP4

Digi-ic_SMART PIONEER

DIP-4 SMT Single Channel 70 V 5000 Vrms Phototransistor Optocoupler

Future Electronics

OPTOCOUPLER, TRANSISTOR, O/P; No. of Channels:1; Isolation Voltage:5kV; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:70V; Opto Case Style:SMD; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Output Type:Phototransistor

Farnell

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Fairchild Semiconductor

Collector-Emitter Voltage (VCEO) Max. V = 70 / Collector Current Max. mA = 50 / Power Dissipation (Pd) mW = 150 / Reverse Voltage (Vr) V = 6 / Package Type = DIP-4 / Collector-Emitter Saturation Voltage Max. mV = 200 / Emitter−Collector Voltage (VECO) Max. V = 6 / Forward Voltage (Vf) Max. V = 1.4 / Output Type = Phototransistor / Isolation Voltage kV = 5 / Forward Current (If) Max. mA = 50 / Current Transfer Ratio (CTR) Min. % = 80 / Operating Temperature Max. °C = 110 / Operating Temperature Min. °C = -55 / Current Transfer Ratio (CTR) Max. % = 160 / Channels = 1

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