Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
IGBT MODULE, 600V, 50A; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:600V; Current, Ic Continuous a Max:50A; Voltage, Vce Sat Max:2.8V; Power Dissipation:250W; Case Style:7PM-GA; Termination Type:Screw; Centres, Fixing:80mm; Current, Icm Pulsed:100A; Depth, External:93mm; Diameter, Fixing Hole:5.4mm; Pin Configuration:C2E1, E2, C1, G2, E2, E1, G1; Power, Pd:250W; Time, Rise:30ns; Transistors, No. of:2; Voltage, Vceo:600V