供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-09-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-09-12
LTD Date2010-03-12
描述
由其分销商提供的 onsemi FMG2G75US60 的描述。
IGBT Module Half Bridge 600V 75A 310W Chassis Mount 7PM-GA
600V, 75A IGBT Module (Molding Type)
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel
IGBT MODULE 600V 75A 310W 7PMGA
IGBT MODULE, 600V, 75A; Transistor Type:IGBT Module; Transistor Polarity:NPN; Voltage, Vces:600V; Current Ic Continuous a Max:75A; Voltage, Vce Sat Max:2.8V; Power Dissipation:310W; Case Style:7PM-GA; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:150A; External Depth:93mm; Fixing Centres:80mm; Fixing Hole Diameter:5.4mm; Pin Configuration:C2E1, E2, C1, G2, E2, E1, G1; Power, Pd:310W; Time, Rise:40ns; Transistors, No. of:2
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageModule
Contact PlatingTin
MountChassis Mount, Screw
Number of Pins7
Number of Terminals7
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.8 V
Collector Emitter Voltage (VCEO)600 V
Current Rating75 A
Element ConfigurationDual
InputStandard
Input Capacitance7.056 nF
Max Collector Current75 A
Max Operating Temperature150 °C
Max Power Dissipation310 W
Min Operating Temperature-40 °C
NTC ThermistorNo
Number of Elements2
PackagingBulk
Power Dissipation310 W
Rise Time40 ns
TerminationScrew
Voltage Rating (DC)600 V
Dimensions
Hole Diameter5.4 mm