供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-05-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23
相关零件
NXP SemiconductorsBUJ106A,127
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
描述
由其分销商提供的 onsemi FJPF13009TU 的描述。
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NPN Silicon Transistor
TRANS NPN 400V 12A TO-220F
TRANS NPN 400V 12A TO220F-3
The FJPF13009 is a 700 V 12 A NPN Silicon Epitaxial Planar Transistor. The FJPF13009 is available with multiple hFE bin classes for ease of design use. The FJPF13009 is designed for high speed switching applications which utilizes the industry standard TO-220F package offering flexibility in design and excellent Power Dissipation.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Weight2.27 g
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)400 V
Current Rating12 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
Frequency4 MHz
Gain Bandwidth Product4 MHz
hFE Min6
Max Collector Current12 A
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation50 W
Transition Frequency4 MHz
Voltage Rating (DC)400 V