供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiFGH40T65SPD-F155
IGBT 650V 80A 267W TO-247 / IGBT Trench Field Stop 650 V 80 A 267 W Through Hole TO-247-3
描述
由其分销商提供的 onsemi FGA40T65SHD 的描述。
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3PN Rail
IGBT, 650 V, 40 A Field Stop Trench 650 V, 40 A Field Stop Trench IGBT
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountThrough Hole
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)650 V
Max Collector Current80 A
Max Operating Temperature175 °C
Max Power Dissipation268 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time31.8 ns