onsemi FGA30S120P

Name: onsemi FGA30S120P
Brand: onsemi
SKU: FGA30S120P

IGBT 1300V 60A 348W TO3P / Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3P Tube

$ 3.657

EOL

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min
Avnet	FGA30S120P	28	241				3.657	3.619	3d
Rochester Electronics	FGA30S120P	600				3.310	2.960	2.780	18h
Flip Electronics	FGA30S120P	28							3d
Farnell	FGA30S120P	71	1	7.845*	5.540*	5.379*	5.379*	5.379*	5h
element14 APAC	FGA30S120P	71	1	9.477*	7.018*	5.663*	4.457*	4.457*	7h

数据表和文档

下载 onsemi FGA30S120P 的数据表和制造商文档。

Upverter

Technical Drawing1 页6 年前

IHS

onsemi

Fairchild Semiconductor

TME

库存历史记录

3 个月趋势:

-0.12%

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-12-12

Lifecycle StatusEOL (Last Updated: 1 week ago)

LTB Date2023-03-30

LTD Date2023-09-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)

描述

由其分销商提供的 onsemi FGA30S120P 的描述。

IGBT 1300V 60A 348W TO3P / Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3P Tube

Win Source

IGBT, 1.3KV, 60A, 175DEG C, 348W; Available until stocks are exhausted

Farnell

IGBT, 1300V, 30A, Shorted-anode

onsemi

Insulated Gate Bipolar Transistor, 60A I(C), 1300V V(BR)CES, N-Channel

IHS

IGBT Transistors Shorted AnodeTM IGBT

Fly-Wing Technology

晶体管, IGBT, 1.3KV, 60A, 175度 C, 348W;

element14 APAC

IGBT TRENCH/FS 1300V 60A TO3PN

Vigor Components

INSULATED GATE BIPOLAR TRANSISTO

ODG (Origin Data Global)

IC REG LINEAR POS ADJ 1A TO252-5

Utmel Electronic

Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.

Fairchild Semiconductor