供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-12-05
Lifecycle StatusProduction (Last Updated: 4 months ago)
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描述
由其分销商提供的 STMicroelectronics STGW30NC120HD 的描述。
N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247
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STMicroelectronics SCT
Stgw30nc120hd Igbt N 1200V 30A TO247
IGBT Transistors N-CHANNEL IGBT
IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Collector Base Breakdown Voltage (VCES)1.2 kV
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.2 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current30 A
Current Rating30 A
Element ConfigurationSingle
Forward Current30 A
Forward Voltage1.9 V
Max Collector Current60 A
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation220 W
Reverse Recovery Time152 ns
Rise Time11 ns
Turn-Off Delay Time275 ns
Turn-On Delay Time29 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm