onsemi FDZ1323NZ

Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET 20V, 10A, 13mΩ

2W 12V 1.2V@ 250¦ÌA 24nC@ 10V 2N 20V 13m¦¸@ 1A,4.5V 10A 2.055nF@10V BGA 1.5mm*1mm*600¦Ìm

Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Dual MOSFET, N Channel, 20 V, 10 A, 13 mohm

TRANS MOSFET N-CH 20V 10A 6-PIN WLCSP

MOSFET COMMONDRAIN N-CH. 2.5 V P

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art“low pitch” WLCSP packaging process, the FDZ1323NZ minimizes both PCB space and rS1S2(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, lowgate charge and low rS1S2(on).