供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FDV304P 的描述。
Transistor MOSFET P-Ch. -0,46A/-25V SOT23 FDV 304 P
25V 460mA 1.1Ω@4.5V,500mA 350mW 1.5V@250uA P Channel SOT-23-3L MOSFETs ROHS
DIGITAL FET, P-CHANNEL Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -460 / Drain-Source Voltage (Vds) V = -25 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = -8 / Fall Time ns = 35 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)460 mA
Current46 A
Current Rating-460 mA
Drain to Source Breakdown Voltage-25 V
Drain to Source Resistance1.1 Ω
Drain to Source Voltage (Vdss)-25 V
Dual Supply Voltage-25 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)-8 V
Input Capacitance63 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs-860 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation350 mW
Rds On Max1.1 Ω
Resistance1.5 Ω
Rise Time8 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-860 mV
Turn-Off Delay Time55 ns
Turn-On Delay Time7 ns
Voltage25 V
Voltage Rating (DC)-25 V
Dimensions
Height1.11 mm
Length2.92 mm