onsemi FDV301N

Name: onsemi FDV301N
Brand: onsemi
SKU: FDV301N

Power MOSFET, N Channel, 25 V, 220 mA, 4 ohm, SOT-23, Surface Mount

$ 0.064

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Future Electronics	3	FDV301N	29,100,000	3K	Tape & Reel					0.018
Avnet	2	FDV301N	864,146	16667							4d
Newark	2	FDV301N	14,878	1	Cut Tape	0.269	0.269	0.109	0.073	0.073
Verical	4	FDV301N	1,011,000	3K						0.030
Arrow Electronics	3	FDV301N	12,768	1		0.251	0.136	0.085	0.064	0.044

数据表和文档

下载 onsemi FDV301N 的数据表和制造商文档。

IHS

Datasheet5 页0 年前

Datasheet8 页4 年前

Upverter

Newark

onsemi

Farnell

库存历史记录

3 个月趋势:

-10.37%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FDV301N 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMainland China, Philippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-07-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDV301N 的描述。

Power MOSFET, N Channel, 25 V, 220 mA, 4 ohm, SOT-23, Surface Mount

Avnet Silica

MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 350 mW

Distrelec

This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.

Fairchild Semiconductor

N CHANNEL MOSFET, 220MA, 25V, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:2.7V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:220mA; Current Temperature:25°C; ESD HBM:6kV; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Pd:350mW; Pulse Current Idm:500mA; SMD Marking:301; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V

element14 APAC